Performance Analysis of Temperature on Wireless Performance for Vertically Stacked Junctionless Nanosheet Field Effect Transistor
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-0055-8_2
Reference21 articles.
1. Emona D, Avik C, Abhijit M (2020) Relative study of analog performance, linearity, and harmonic distortion between junctionless and conventional SOI FinFETs at elevated temperatures. J Electron Mater 49(5):3309–3316
2. Barman KR, Baishya S (2020) Study of temperature effect on analog/RF and linearity performance of dual material gate (DMG) vertical super-thin body (VSTB) FET. Silicon, pp 1–10
3. Tayal S, Bhattacharya S, Jena B, Ajayan J, Muchahary D, Singla P (2021) Linearity performance and harmonic distortion analysis of IGE junctionless silicon nanotube-FET for wireless applications. Silicon, pp 1–6
4. Tayal S, Mittal V, Jadav S, Gupta S, Nandi A, Krishan B (2020) Temperature sensitivity analysis of inner-gate engineered JL-SiNT-FET: an Analog/RF prospective. Cryogenics 108:103087
5. Awadhiya B, Pandey S, Nigam K, Kondekar PN (2017) Effect of ITC’s on linearity and distortion performance of junctionless tunnel field effect transistor. Superlattices Microstruct 111:293–301
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1. Nanosheet Field Effect Transistor Device and Circuit Aspects for Future Technology Nodes;ECS Journal of Solid State Science and Technology;2023-08-01
2. Temperature Analysis of DMGC CGAA FET for Future Deep Space and Military Applications: An Insight into Analog/RF/Self-Heating/Linearity;ECS Journal of Solid State Science and Technology;2023-08-01
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