Variation of electronic properties and evidence for a reversible defect induced metal to semiconductor transition in PbMo6S8 observed by ion irradiation and subsequent annealing of thin films-Reference-Cited by-同舟云学术

Variation of electronic properties and evidence for a reversible defect induced metal to semiconductor transition in PbMo6S8 observed by ion irradiation and subsequent annealing of thin films

Published:1987-03 Issue:1 Volume:67 Page:75-87
ISSN:0722-3277
Container-title:Zeitschrift f�r Physik B Condensed Matter
language:en
Short-container-title:Z. Physik B - Condensed Matter

Author:

Adrian G.,Adrian H.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF01307310.pdf

Reference36 articles.

1. Chevrel, R., Sergent, M., Prigent, J.: J. Solid State Chem.3, 515 (1971)

2. Espelund, A.: Acta Chem. Scand.21, 839 (1967)

3. Fischer, ?. Appl. Phys.16, 1 (1978)

4. see e.g. Superconductivity in Ternary Compounds I+II. Fischer, ?, Maple, M.B. (eds). Berlin Heidelberg New York: Springer 1982

5. Perrin, A., Sergent, M., Fischer, ?. Mater. Res. Bull.13, 259 (1978)

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