Significance of Hall measurements in Ga1−xAlxAs alloys at 300 K-Reference-Cited by-同舟云学术

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Significance of Hall measurements in Ga1−xAlxAs alloys at 300 K

Published:1983-08 Issue:2 Volume:21 Page:123-129
ISSN:0304-4289
Container-title:Pramana
language:en
Short-container-title:Pramana - J Phys

Author:

Saxena Ashok K,Singh B B

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF02894736.pdf

Reference23 articles.

1. Bhattacharya P K, Majerfeld A and Saxena A K 1979Proc. 7th Int. Symp. on GaAs and related compounds (ed.) L F Eastman (London: Inst. of Phys.) p. 199

2. Craford M G and Groves W O 1973Proc. Inst. of Electron and Electrical Engg. 61 862

3. Dingle R, Logan R A and Arthur J R 1977Proc. 6th Int. Symp. on GaAs and related compounds (ed.) by C Hilsum (London: Inst. of Phys.) p. 210

4. Dzhafarov T D, Demakov Y P, Skoryatina E A and Khudyakov S V 1977Sov. Phys. Semicond. 11 821

5. Gonda S, Makita Y, Mukai S, Tsurushina T and Tanoue H 1976Appl. Phys. Lett. 29 196

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Variations of energies and line shapes of the electroreflectance spectra of epitaxial AlxGa1−xAs;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1987-07

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