Some results of work on artificial epitaxy (diataxy)-Reference-Cited by-同舟云学术

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Some results of work on artificial epitaxy (diataxy)

Published:1979-10 Issue:1-3 Volume:47 Page:191-193
ISSN:0001-6705
Container-title:Acta Physica Academiae Scientiarum Hungaricae
language:en
Short-container-title:Acta Physica

Author:

Sheftal N. N.

Publisher

Springer Science and Business Media LLC

Subject

Nuclear and High Energy Physics

Link

http://link.springer.com/content/pdf/10.1007/BF03156525.pdf

Reference5 articles.

1. N. N. Sheftal (ed.), Growth of Crystals, Vol.10. Consultants Bureau, New York, 1976, p. 185.

2. E. Hartmann, N. N. Sheftal andV. I. Klykov, Acta Phys. Hung., this issue, p. 185.

3. E. Hartmann, Acta Phys. Hung., this issue, p. 189.

4. V. I. Klykov, N. N. Sheftal andE. Hartmann, Acta Phys. Hung., tbis issue, p. 167.

5. H. I. Smith andD. C. Flanders, Appl. Phys. Lett.,32, 349, 1978.

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3. Silicon-on-insulator by graphoepitaxy and zone-melting recrystallization of patterned films;Journal of Crystal Growth;1983-10

4. Mechanism for the Graphoepitaxy of Electrodeposited Tin;Journal of The Electrochemical Society;1983-06-01

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