High efficiency and enhanced ESD properties of UV LEDs by inserting p-GaN/p-AlGaN superlattice
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s11433-014-5408-2.pdf
Reference15 articles.
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2. Fang H N, Zhang R, Liu B, et al. Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy. Sci China-Phys Mech Astron, 2013, 56: 2059–2064
3. Inoue T. Light-emitting device. Japanese Patent, H11-040 848, 1999
4. Chang S J, Chen C H, Su Y K, et al. Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes. IEEE Electr Device L, 2003, 24: 129–131
5. Tsai C M, Sheu J K, Wang P T, et al. High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD. IEEE Phton Technol Lett, 2006, 18: 1213–1215
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1. Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors;Applied Physics Letters;2019-10-21
2. Effects of modulation doped n-AlGaN epilayers on the optoelectronic properties of 278-nm AlGaN-based flip-chip light-emitting devices;Journal of Materials Science: Materials in Electronics;2019-05-25
3. Double superlattice structure for improving the performance of ultraviolet light-emitting diodes;Chinese Physics B;2019-03
4. Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy;Science China Physics, Mechanics & Astronomy;2019-01-02
5. Role of silicon wafer on performance of UV-LEDs;Journal of Physics: Conference Series;2018-09
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