Influence of oxygen treatment and temperature on electrical properties of the epitaxial Nb-doped SrTiO3 films on silicon
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s11433-013-5260-9.pdf
Reference12 articles.
1. Watanabe Y, Bednorz J G, Bietsch A, et al. Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals. Appl Phys Lett, 2001, 78(23): 3738–3740
2. Szot K, Spier W, Bihlmayer G, et al. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nat Mater, 2006, 5(4): 312–320
3. Odagawa A, Sato H, Inoue I H, et al. Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature. Phys Rev B, 2004, 70(22): 224403
4. Liu G Z, Jin K J, Qiu J, et al. Resistance switching in BaTiO3−δ /Si p-n heterostructure. Appl Phys Lett, 2007, 91(25): 252110
5. Zhang X T, Yu Q X, Yao Y P, et al. Ultrafast resistive switching in SrTiO3:Nb single crystal. Appl Phys Lett, 2010, 97(22): 222117
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