Charging Effect in Basic and Complex Mask Patterns During Plasma Etching
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s11090-022-10277-9.pdf
Reference25 articles.
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3. Donnelly VM, Kornblit A (2013) Plasma etching: yesterday, today, and tomorrow. J Vac Sci Technol A Vac Surf Films 31(5):050825
4. Kanarik KJ, Kamarthy G, Gottscho RA (2012) Plasma etch challenges for FinFET transistors. Solid State Technol 55(3):15–17
5. Ryu H-K et al (2003) Effects of CH2F2 addition on a high aspect ratio contact hole etching in a C4F6/O2/Ar plasma. Electrochem Solid State Lett 6(9):C126
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1. Specialized design for three basic mask patterns counteract charging effects during plasma etching;Physics of Plasmas;2024-02-01
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