Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processes-Reference-Cited by-同舟云学术

Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processes

Published:1993-08 Issue:8 Volume:22 Page:847-851
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Edwall D. D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02817496.pdf

Reference17 articles.

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3. R. Korenstein, P. Hallock and B. MacLeod,J. Vac. Sci. Technol. B9, 1630 (1991).

4. R. Koestner, V. Lopes, R. Korenstein, S. Oguz, V. Kreismanis, H. Ehsani and I. Bhat,J. Vac. Sci. Technol. B10, 1643 (1992).

5. M.J. Bevan, J. Greggi and N.J. Doyle,J. Mater. Res. 5, 1475 (1990).

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