Defect reduction and surface passivation of SiO 2 /Si by heat treatment with high-pressure H 2 O vapor
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s003390050993.pdf
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure;Precision Engineering;2019-11
2. Physical and electrical properties of ALD-Al2O3/GaN MOS capacitor annealed with high pressure water vapor;Japanese Journal of Applied Physics;2019-03-27
3. Relationship between passivation properties and band alignment in O3-based atomic-layer-deposited AlOxon crystalline Si for photovoltaic applications;Japanese Journal of Applied Physics;2015-07-17
4. Efficient organic/polycrystalline silicon hybrid solar cells;Nano Energy;2015-01
5. Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si;Applied Physics A;2012-08-21
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