On the impeded growth of oxide films on Si in N 2 O ambient-Reference-Cited by-同舟云学术

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On the impeded growth of oxide films on Si in N 2 O ambient

Published:1999-05-01 Issue:5 Volume:68 Page:573-575
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Novkovski N.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390050943.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors;Frontiers in Materials;2014-12-08

2. Wear-out and breakdown of thermally grown Ta2O5insulating films on plasma oxynitrided Si substrates;physica status solidi (a);2006-06

3. Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O;Applied Physics A;2005-11

4. Dielectric properties of rf sputtered Ta2O5on rapid thermally nitrided Si;Semiconductor Science and Technology;2005-01-21

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