Adsorption and growth of Al on Si(100) in the initial stage-Reference-Cited by-同舟云学术

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Adsorption and growth of Al on Si(100) in the initial stage

Published:1999-02-01 Issue:2 Volume:68 Page:145-151
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Zhu C.X.,Misawa S.,Tsukahara S.,Kawazu A.,Pang S.J.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390050869.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced nucleation of Al islands on H-dosed Si(100)-2 × 1 surface: A combined density functional theory and kinetic Monte Carlo study;Surface Science;2013-11

2. Growth and interfacial properties of epitaxial oxides on semiconductors: ab initio insights;Journal of Materials Science;2012-05-03

3. MODELING OF CO-DEPOSITION OF INDIUM AND TIN ON SILICON(100): A KINETIC MONTE CARLO STUDY;International Journal of Modern Physics B;2011-06-10

4. Room-temperature deposition of group III metals on Si(100): A comparative study of nucleation behavior;Surface Science;2010-02

5. Studies in micelle-mediated Pd nucleation;Chemical Communications;2010

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