Thickness determination of low doped SiC epi-films on highly doped SiC substrates-Reference-Cited by-同舟云学术

Thickness determination of low doped SiC epi-films on highly doped SiC substrates

Published:1998-04 Issue:4 Volume:27 Page:300-303
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Macmillan M. F.,Henry A.,Janzén E.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0404-9.pdf

Reference18 articles.

1. E. Janzén and O. Kordina, Proc. Intl. Conf. of SiC and Related Materials 95, September 18–21, 1995, Kyoto, Japan, Vol. 142 (Bristol: Inst. of Physics, 1996), p. 653.

2. M.F. MacMillan, WJ. Choyke and R.P. Devaty, Proceedings of Physics, Vol. 71 (Berlin: Springer-Verlag, 1992), p. 216.

3. F. Engelbrecht and R. Helbig, Phys. Rev. B 48, 15698 (1993).

4. M.F. MacMillan, R.P. Devaty, W.J. Choyke, M. Asif Khan, M.E. Lin, H. Morkoç, W.A. Bryden, T.J. Kistenmacher and S. Nakamura, Institute of Physics Conf. Series 137, 461 (Bristol: Inst. of Physics, 1993).

5. M.F. MacMillan, R.P. Devaty and W.J. Choyke, Appl. Phys. Lett. 62, 750 (1993).

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