Hydrogen passivation in n- and p-type 6H-SiC-Reference-Cited by-同舟云学术

Hydrogen passivation in n- and p-type 6H-SiC

Published:1997-03 Issue:3 Volume:26 Page:198-202
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Ren F.,Grow J. M.,Bhaskaran M.,Wilson R. G.,Pearton S. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-997-0150-4.pdf

Reference23 articles.

1. J.W. Pahnour, C.H. Carter, Jr., C.E. Weitzel and K.J. Nordquist, Mater. Res. Soc. Symp. Proc. 339, (Pittsburgh, PA: Mater. Res. Soc, 1994), p. 133.

2. J.R. Flemish,K, Xie and G.F. McLane.Mater. Res. Soc. Symp. Proc. 428, (Pittsburgh, PA: Mater. Res. Soc, 1996), p. 106.

3. M. Bhatnagar and B.J. Baliga, IEEE Trans. Electron. Dev. 40, 645 (1993).

4. R.J. Trew, J.B. Yan and P.M. Mock, Proc. IEEE 79, (New York: IEEE, 1991), p. 598.

5. J.M. McGarrity, F.B. McLean, W.M. DeLancey, J.W. Palmour, C.H. Carter, J.A. Edmond and R.E. Oakley, IEEE Trans. Nucl. Sci. 39, 1974 (1992).

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen in SiC;Silicon Carbide;2004

2. Hydrogen passivation of nitrogen in SiC;Applied Physics Letters;2003-08-18

3. Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide;Physical Review B;2001-10-15

4. Hydrogen passivation and reactivation of the Al-acceptors in p-type 6H-SiC;Journal of Physics: Condensed Matter;2001-09-20

5. Ru Schottky Barrier Contacts to n- and p-type 6H-SiC;Materials Science Forum;2001-01