Characterization of phosphorus implantation in 4H-SiC-Reference-Cited by-同舟云学术

Characterization of phosphorus implantation in 4H-SiC

Published:1999-03 Issue:3 Volume:28 Page:167-174
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Khemka V.,Patel R.,Ramungul N.,Chow T. P.,Ghezzo M.,Kretchmer J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-999-0008-z.pdf

Reference28 articles.

1. A.K. Agarwal, J.B. Casady, L.B. Rowland, W.F. Vale and C.D. Brandt, Proc. Intl. Conf. on Silicon Carbide, III-N and Related Mater., Stockholm, Sweden, 1997, p. 989.

2. J.B. Casady, A.K. Agarwal, L.B. Rowland, R.R. Siergiej, S. Seshadri, S. Mani, J. Barrows, D. Piccone, P.A. Sanger and C.D. Brandt, Proc. Intl. Conf. on Silicon Carbide, III-N and Related Mater., Stockholm, Sweden, 1997, p. 1069.

3. N. Ramungul, T.P. Chow, M. Ghezzo, J. Kretchmer and W. Hennessy, Device Research Conf., Paper III.A-3, 1996, p. 56.

4. C.E. Weitzel, Proc. Intl. Conf. on Silicon Carbide, III-N and Related Mater., Stockholm, Sweden, 1997, p. 907.

5. A.K. Agarwal, L.-S. Chen, G.W. Eldridge, R.R. Siergiej and R.C. Clarke, Device Research Conf., Paper IV.B-6, 1998, p. 94.

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