Two wide-tuning-range mm-wave VCOs with SCTL and SCCPW in 45 nm SOI CMOS for 5G applications-Reference-Cited by-同舟云学术

Two wide-tuning-range mm-wave VCOs with SCTL and SCCPW in 45 nm SOI CMOS for 5G applications

Published:2019-12-24 Issue:2 Volume:102 Page:457-463
ISSN:0925-1030
Container-title:Analog Integrated Circuits and Signal Processing
language:en
Short-container-title:Analog Integr Circ Sig Process

Author:

Yang Hui,He Tianye,Wang Rumeng,Zhang Runxi^ORCID,Shi Chunqi

Funder

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Link

http://link.springer.com/content/pdf/10.1007/s10470-019-01574-z.pdf

Reference11 articles.

1. China, M.I.I.T. (Nov. 2016). 2017 Grant application guidelines of national science and technology major projects: New generation wireless broadband mobile communication network.

2. Commission, F.C. (Jun. 2016). Fact sheet: Spectrum frontiers proposal to identify, open up vast amounts of new high-band spectrum for next generation (5G) wireless broadband.

3. Forsberg, T., Wernehag, J., Nejdel, A., Sjöland, H., & Törmänen, M. (2017). Two mm-wave VCOs in 28-nm UTBB FD-SOI CMOS. IEEE Microwave and Wireless Components Letters, 27(5), 509–511. https://doi.org/10.1109/LMWC.2017.2690845.

4. Jia, H., Chi, B., Kuang, L., & Wang, Z. (2015). A 47.6–71.0-GHz 65-nm CMOS VCO based on magnetically coupled $$\pi$$-type LC network. IEEE Transactions on Microwave Theory and Techniques, 63(5), 1645–1657. https://doi.org/10.1109/TMTT.2015.2415487.

5. Jiang, C., Zhang, R., & Shi, C. (2019). A 24–28 GHz high-stability CMOS power amplifier using common-gate-shorting CGS technique with 17.5 dBm Psat and 16.3% PAE for 5G millimeter-wave applications. Analog Integrated Circuits and Signal Processing, 98(1), 193–200.