Reduction of dislocation densities in InP single crystals by the LEC method using thermal baffles-Reference-Cited by-同舟云学术

Reduction of dislocation densities in InP single crystals by the LEC method using thermal baffles

Published:1996-03 Issue:3 Volume:25 Page:347-351
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Hirano R.,Uchida M.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02666600.pdf

Reference16 articles.

1. M. Tatsumi, T. Kawase, T. Araki, N. Yamabyashi, T. Iwase, Y. Miura, M. Murai, K. Tada and S. Akai,Proc. First Intl. Conf. on InP and Related Materials for Adv. Electronic and Optical Devices, Oklahoma, SPIE 1144, 18 (1989).

2. Y. Hosokawa, S. Kawarabayashi, Y. Yabuhara, M. Morioka, M. Yokogawa and S. Akai,Proc. Fourth Intl. Conf. on InP and Related Material, Newport, (1992), p. 258.

3. Y. Yabuhara, S. Kawarabayashi, N. Toyoda, M. Yokogawa, K. Fujita and M . Yamada,Fifth Intl. Conf. on InP and Related Material, Paris, (1993), p. 309.

4. K. Kohiro, K. Kainosho, H. Shimakura, T. Fukui and O. Oda,Proc. Second lntl. Conf. on InP and Related Materials for Adv. Electronic and Optical Devices, Denver, (1990), p. 35.

5. K. Kohiro, K. Kainosho and O. Oda,J. Electron. Mater. 20, 1013 (1991).

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