Process control model for growth rate of molecular beam epitaxy of MgO (111) nanoscale thin films on 6H-SiC (0001) substrates

Author:

Uddin Ghulam Moeen,Ziemer Katherine S.,Zeid Abe,Lee Yung-Tsun Tina,Kamarthi Sagar

Funder

National Institute of Standards and Technology

Publisher

Springer Science and Business Media LLC

Subject

Industrial and Manufacturing Engineering,Computer Science Applications,Mechanical Engineering,Software,Control and Systems Engineering

Reference19 articles.

1. Doolittle WA, Carver AG, Henderson W (2005) Molecular beam epitaxy of complex metal-oxides: where have we come, where are we going, and how are we going to get there? Journal of Vacuum Science & Technology, B: Microelectronics and Nanoscalemeter Structures-Processing, Measurement, and Phenomena 23(3):1272–1276

2. Goodrich TL (2008) Atomistic investigation into the interface engineering and heteroepitaxy of functional oxides on hexagonal silicon carbide through the use of a magnesium oxide template layer for the development of a multifunctional heterostructure, Dissertation, Northeastern University

3. Craft HS, Ihlefeld JF, Losego MD, Collazo R, Sitar Z, Maria J-P (2006) MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy. Appl Phys Lett 88(21):212906.1–212906.3

4. Chen Z, Yang A, Geiler A, Harris VG, Vittoria C, Ohodnicki PR, Goh KY, McHenry ME, Cai Z, Goodrich TL, Ziemer KS (2007) Epitaxial growth of M-type Ba-hexaferrite films on MgO (111) SiC (0 0 01) with low ferromagnetic resonance linewidths. Appl Phys Lett 91(18):182505.1–182505.3

5. Cai Z (2010) Molecular beam epitaxy integration of magnetic ferrites with wide bandgap semiconductor 6H-SiC for next generation microwave and spintronic devices, Dissertation, Northeastern University

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