1. V.V. Afanas’ev, “SiC/SiO2 interface defects”, in Defects in SiO2 and Related Dielectrics: Science and Technology, eds. G. Pacchioni, L. Skuja, and D.L. Griscom, Kluwer Academic, Dordrecht, p. 529 (2000).
2. L.A. Lipkin and J.W. Palmour “Insulator Investigation on SiC for Improved Reliability”, IEEE Trans. Electron Devices 46, 525–529 (1999).
3. V.V. Afanas’ev, M. Bassler, G. Pensi, M.J. Schulz, and E.S. von Kamienski, “Band offsets and electronic structure of SiC/SiO2 interfaces”, J. Appl. Phys. 7, 3108–3113 (1996).
4. A.K. Agarwal, S. Seshadri, and L.B. Rowland, “Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors”, IEEE Electron Device Lett. 18, 592–594 (1997).
5. E. Bano, T. Ouisse, P. Lassagne, T. Billon, and C. Jaussaud, “High temperature dependence of Fowler-Nordheim emission tunneling current in (6H) and (4H) SiC MOS capacitors”, Proceedings of the International Conference on SiC and related Materials, Kyoto, Japan, 18–21 September 1995, Conference Series No. 142, Institute of Physics, Bristol, pp. 733–736 (1996).