Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-022-3491-6.pdf
Reference8 articles.
1. Yang X Q, Xu Y N, Bi J S, et al. Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci China Inf Sci, 2022, 65: 169403
2. Ravichandran V, Li C, Banagozar A, et al. Artificial neural networks based on memristive devices. Sci China Inf Sci, 2018, 61: 060423
3. Dünkel S, Trentzsch M, Richter R, et al. A FeFET based super-low-power ultra-fast embedded NVM technology for 22 nm FDSOI and beyond. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, 2017
4. AliT, Kuühnel K, Czernohorsky M, et al. Impact of ferroelectric wakeup on reliability of laminate based Si-doped hafnium oxide (HSO) FeFET memory cells. In: Proceedings of IEEE International Reliability Physics Symposium (IRPS), Dallas, 2020
5. Higashi Y, Kaczer B, Verhulst A S, et al. Investigation of imprint in FE-HfO2 and its recovery. IEEE Trans Electron Devices, 2020, 67: 4911–4917
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