High precision current mirror circuit based on two-dimensional material transistors-Reference-Cited by-同舟云学术

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High precision current mirror circuit based on two-dimensional material transistors

Published:2024-07-22 Issue:8 Volume:67 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Gao Shiping,Pan Chen,Su Pincheng,Yangdong Xing-Jian,Yu Wentao,Zeng Zhoujie,Shen Yu,Shi Jingwen,Cui Yanwei,Wang Pengfei,Yang Yuekun,Wang Cong,Cheng Bing,Liang Shi-Jun,Miao Feng

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11432-024-4083-6.pdf

Reference5 articles.

1. Das S, Sebastian A, Pop E, et al. Transistors based on two-dimensional materials for future integrated circuits. Nat Electron, 2021, 4: 786–799

2. Pan C, Shi J W, Wang P F, et al. Polarity tunable complementary logic circuits. Sci China Inf Sci, 2023, 66: 229401

3. Conti S, Pimpolari L, Calabrese G, et al. Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper. Nat Commun, 2020, 11: 3566

4. Polyushkin D K, Wachter S, Mennel L, et al. Analogue two-dimensional semiconductor electronics. Nat Electron, 2020, 3: 486–491

5. Marani R, Perri A G. CNTFET-based design of current mirror in comparison with MOS technology. ECS J Solid State Sci Technol, 2017, 6: M60–M68

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1. Erratum to: High precision current mirror circuit based on two-dimensional material transistors;Science China Information Sciences;2024-08-28

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