A self-selecting memory element based on a method of interconnected ovonic threshold switching device
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11432-023-3907-x.pdf
Reference5 articles.
1. DerChang K, Tang S, Karpov I V, et al. A stackable cross point phase change memory. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2009. 1–4
2. Yi J, Kim M, Seo J, et al. The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256gb cross-point memory. In: Proceedings of IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023. 1–2
3. Ravsher T, Degraeve R, Garbin D, et al. Polarity-dependent threshold voltage shift in ovonic threshold switches: challenges and opportunities. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2021
4. Wang L, Wen J, Zhu R, et al. Failure mechanism investigation and endurance improvement in Te-rich Ge-Te based ovonic threshold switching selectors. Appl Phys Lett, 2022, 121: 193501
5. Wang L, Wen J, Liu Z, et al. Thermally stable and highspeed Ge-Te based ovonic threshold switching selector with a Ge intercalated structure. IEEE Electron Dev Lett, 2023, 44: 1096–1099
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