The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature-Reference-Cited by-同舟云学术

The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature

Published:2017-01-30 Issue:9 Volume:74 Page:3765-3781
ISSN:0170-0839
Container-title:Polymer Bulletin
language:en
Short-container-title:Polym. Bull.

Author:

Demirezen S.,Kaya A.,Altındal Ş.,Uslu İ.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Polymers and Plastics,Condensed Matter Physics,General Chemistry

Link

http://link.springer.com/article/10.1007/s00289-017-1925-2/fulltext.html

Reference35 articles.

1. Sze SM (1981) Physics of semiconductor devices. Wiley and Sons, New York

2. Nicollian EH, Brews JR (1982) Metal oxide semiconductor (MOS) physics and technology. Wiley, New York

3. Parlaktürk F, Altındal Ş, Tataroğlu A, Parlak M, Agasiev (2008) A on the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures. Microelectron Eng 85:81–88

4. Şafak-Asar Y, Asar T, Altındal Ş, Özçelik S (2015) Investigation of dielectric relaxation and AC electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(1 1 0) schottky barrier diodes. J Alloy Compd 628:442–449

5. Jayalakshmi M, Balasubramanian K (2008) Simple capacitors to supercapacitors—an overview. Int J Electrochem Sci 3:1196–1217

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements;Journal of Materials Science: Materials in Electronics;2024-04

2. Bacterial MgSe complex nanoparticle synthesis and electrical characterization of fabricated Ag/MgSe/p-Si hetero-structure under dark and illumination;Heliyon;2023-11

3. Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications;Physica Scripta;2023-10-06

4. Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation;Balkan Journal of Electrical and Computer Engineering;2023-06-04

5. Variation of the Surface States and Series Resistance Depending on Voltage, and Their Effects on the Electrical Features of a Schottky Structure with CdZnO Interface;Journal of Electronic Materials;2023-01-12