Chemically Amplified Resist for Micromachining Using X-Ray Lithography
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Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4757-5791-0_5
Reference15 articles.
1. V. V. Aristov, V. A. Kudryashov and A. V. Chukalin. Electron beam lithography resolution upon exposure of superthick resist layers. Microelectronic Eng., 1989; 9: 231–233.
2. V. V. Aristov, V. A. Dmitriyeva, V. A. Kudryashov, K. Pfeiffer and H. J. Lorkowski. Multilayer resists with variable layer parameters for submicron lithography. Microelectronic Eng., 1990; 11: 553–556.
3. V. A. Kudryashov, V. V. Krasnov, P. D. Prewett and T. J. Hall. Process latitude enhancement for 3D structure formation in E-beam lithography. Microelectronic Eng., 1997; 35: 487–490.
4. Zheng Cui and P. D. Prewett. Proximity correction of chemically amplified resists for electron beam lithography. Microelectronic Eng., 1998; 41 /42: 183–186.
5. P. Hudek, I. W. Rangelow, I. Kostic, N. Munzel and I. Daraktchiev. Evaluation of chemically amplified deep UV resist for micromachining using E-beam lithography and dry etching. Microelectronic Eng., 1996; 30: 309–312.
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