Abstract
AbstractRapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. β-Ga2O3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals. In this review, after introducing material properties of β-Ga2O3 that are important for electronic devices, current status of bulk melt growth, epitaxial thin-film growth, and device processing technologies are introduced. Then, state-of-the-art β-Ga2O3 Schottky barrier diodes and field-effect transistors are discussed, mainly focusing on development results of the author’s group.
Funder
Council for Science, Technology and Innovation
Ministry of Internal Affairs and Communications
Publisher
Springer Science and Business Media LLC
Cited by
62 articles.
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