A study on the photoconductivity of a set of horizontal Bridgman semi-insulating GaAs ingots-Reference-Cited by-同舟云学术

A study on the photoconductivity of a set of horizontal Bridgman semi-insulating GaAs ingots

Published:1984-04 Issue:4 Volume:19 Page:1207-1219
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Jimenez J.,Gonzalez M. A.,De Saja J. A.,Bonnafe J.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF01120031.pdf

Reference36 articles.

1. G. M. Martin, G. Jacob, G. Poiblaud, A. Goltzene andC. Schwab,Inst. Phys. Conf. Ser. 59 (1981) 281.

2. G. M. Martin, J. P. Farges, G. Jacob andJ. P. Hallais,J. Appl. Phys. 51 (1980) 2840.

3. P. Leyral andG. Guillot, 5nd International Conference on Semi-Insulating III-V, Evian (France), April 1982, edited by S. Makram-Ebeid and B. Tuck (Shiva Publishing Ltd, Nantwich, 1982) p. 166.

4. A. L. Lin, E. Omelianovski andR. H. Bube,J. Appl. Phys. 47 (1976) 1852.

5. A. L. Lin andR. H. Bube,ibid. 50 (1976) 1859.

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