Author:
Chen Hao,Guo Dan,Xie Guoxin,Pan Guoshun
Abstract
Abstract
Chemical mechanical polishing (CMP) is the most effective method for surface planarization in the semiconductor industry. Nanoparticles are significant for material removal and ultra-smooth surface formation. This research investigates the mechanical effects of the material removal in the CMP process. The various contact states of pad, individual particle, and wafer caused by the variations of working conditions and material properties are analyzed. Three different mechanical models for the material removal in the CMP process, i.e., abrasive wear, adhesive wear, and erosive wear are investigated, with a focus on the comparison of the results for different models. The conclusions and methods obtained could potentially contribute to the understanding and evaluation of the CMP process in further work.
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Mechanical Engineering
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