Author:
Pabst Oliver,Schiffer Michael,Obermeier Ernst,Tekin Tolga,Lang Klaus Dieter,Ngo Ha-Duong
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Chabert P (2001) Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms. J Vac Sci Technol B 19(4):1339–1345
2. Fu X, Dunning JL, Zorman CA, Mehregany M (2005) Measurement of residual stress and elastic modulus of polycrystalline 3C-SiC films deposited by low-pressure chemical vapor deposition. Thin Solid Films 492(1–2):195–202
3. Jackson KM, Dunning J, Zorman CA, Mehregany M, Sharpe WN (2005) Mechanical properties of epitaxial 3C Silicon Carbide thin films. J Microelectromech S 14(4):664–672
4. Laermer F, Schilp A, Funk K, Offenberg M (1999) Bosch deep Si etching—improving uniformity and etch rate. In: Proceedings of the 12th IEEE MEMS Conference, pp 211–216
5. Lambrecht WRL, Segall B, Methfessel M, van Schilfgaarde M (1991) Calculated elastic constants and deformation potentials of cubic SiC. Phys Rev B 44(8):3685–3694
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献