A compensating method of convex corner in etching of (110) silicon
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s00542-022-05377-7.pdf
Reference26 articles.
1. Akila BS, Vaithinathan K, Balaganapathi T, Vinoth S, Thilakan P (2017) Investigations on the correlation between surface texturing histogram and the spectral reflectance of (100) Crystalline Silicon Substrate textured using anisotropic etching. Sens Actuat A. https://doi.org/10.1016/j.sna.2017.06.021
2. Ashok A, Pal P (2016) Investigation of room temperature deposited silicon dioxide thin films for surface texturisation of monocrystalline 100 silicon. Micro Nano Lett 11(1):62–66. https://doi.org/10.1049/mnl.2015.0333
3. Biswas K, Das S, Kal S (2006) Analysis and prevention of convex corner undercutting in bulk micromachined silicon microstructures. Microelectron J 37:765–769. https://doi.org/10.1016/j.mejo.2005.10.010
4. Fulong Y, Yongfeng G, Yingchun L, Yan Yongda Fu, Honggang CK, Xichun L (2004) Micro-fabrication of crystalline silicon by controlled alkali etching. J Mater Process Technol 149:567–572. https://doi.org/10.1016/j.jmatprotec.2003.10.060
5. Hao L, Xiao R, Shi Y, Dai P, Zhao Y, Liu S, Lu J, Chen X (2019) Converter based on high-index-contrast polygonal slot in a silicon-on-insulator waveguide. IEEE Photon J. https://doi.org/10.1109/JPHOT.2019.2907640
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