1. Agarwal R, Xie J, Lau K, Sampatha PK, Ranganathan N, Singh J, Tsai M (2011) Challenges and solutions for fabricating isolation trenches for high aspect ratio sensors. Adv Mater Res 254:1–4
2. Arx M, Paul O, Baltes H (2000) Process-dependent thin-film thermal conductivities for thermal CMOS MEMS. J Microelectromech Syst 9:136–145
3. Brosnihan TJ, Bustillo JM, Pisano AP, Howe RT (1997) Embedded interconnect and electrical isolation for high-aspect-ratio SOI inertial instruments. Digest of technical papers of 9th international conference on solid state sensors. Actuators and Microsystems (TRANSDUCERS), Chicago, pp 637–640
4. Chang C, Abe T, Esashi M (2004) Trench filling characteristics of low stress TEOS/ozone oxide deposited by PECVD and SACVD. Microsyst Technol 10:97–102
5. Chen T, Kelly T, Collins D, Bain D, Berthold B, Brosnihan T, Denison T, Kuang J, Kane M, Weigold J (2005) The next generation integrated MEMS and CMOS process on SOI wafers for overdamped accelerometer. Digest of technical papers of 13th international conference on solid state sensors. Actuators and Microsystems (TRANSDUCERS), Seoul, pp 1122–1125