Ohmic contact using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

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Ohmic contact using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures

Published:2006-03 Issue:3 Volume:35 Page:406-410
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Cha Ho-Young,Chen X.,Wu H.,Schaff W. J.,Spencer M. G.,Eastman L. F.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02690526.pdf

Reference13 articles.

1. N.A. Papanicolaou, A. Edwards, M.V. Rao, J. Mittereder, and W.T. Anderson, J. Appl. Phys. 87, 380 (2004).

2. S. Noor Mohammad, J. Appl. Phys. 95, 4856 (2004).

3. C.-J. Youn and K.-Y. Kang, Jpn. J. Appl. Phys. 39, 3955 (2000).

4. V. Desmaris, J. Eriksson, N. Rorsman, and H. Zirath, Electrochem. Solid-State Lett. 7, G72 (2004).

5. V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, J. Appl. Phys. 92, 1712 (2002).

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors;Microelectronic Engineering;2016-02

2. Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure;Thin Solid Films;2015-09

3. Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer;Semiconductor Science and Technology;2015-06-29

4. Development of a Au-free process using Mo-based metallization for high-power AlGaN/GaN-on-Si heterostructure field-effect transistors;Journal of the Korean Physical Society;2014-08

5. Room Temperature Deposition of Silicon Nanodot Clusters by Plasma-Enhanced Chemical Vapor Deposition;Journal of Nanoscience and Nanotechnology;2013-10-01

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