Author:
Luo M.,Shen Y. H.,Yin T. L.
Funder
Innovation Project of Shanghai, China
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Ivanov, P.A., Chelnokov, V.E.: Recent developments in SiC single-crystal electronics. Semicond. Sci. Tech. 7, 863–880 (1992)
2. Narushima, T., Goto, T., Hirai, T., Iguchi, Y.: High-temperature oxidation of silicon carbide and silicon nitride. Mater. Trans. JIM 38, 821–835 (1997)
3. Wang, S.Z., Xu, L.Y., Shu, B.Y., Xiao, B., Zhuang, J.Y., Shi, E.W.: Physical properties, bulk growth, applications of SiC single crystal. J. Inorg. Mater. 14, 527–534 (1999)
4. Casady, J.B., Johnson, R.W.: Status of silicon carbide (SiC) as a wide-band gap semiconductor for high-temperature applications: a review. Solid-St. Electron 39, 1409–1422 (1996)
5. Watari, K.: High thermal conductivity non-oxide ceramics. J. Ceram. Soc. Jpn. 109, S7–S16 (2001)
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献