Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. International Technology Roadmap for Semiconductors (ITRS).
http://itrs.net
(2013)
2. Chen, Q., Meindl, J.D.: Nanoscale metal oxide semiconductor field effect transistors: scaling limits and opportunities. Nanotechnology 15, 8549–8555 (2004)
3. Bendib, T., Djeffal, F.: Electrical performance optimization of nanoscale double-gate MOSFETs using multi-objective genetic algorithms. IEEE Trans. Electron. Dev. 58, 3743–3750 (2011)
4. Meguellati, M., Djeffal, F.: New dual-dielectric gate all around (DDGAA) RADFET dosimeter design to improve the radiation sensitivity. Nucl. Instr. Methods Phys. Res. Sect. A Accel. Spectrom. Detect. Assoc. Equip. 683, 24–28 (2012)
5. Djeffal, F., Abdi, M.A., Dibi, Z., Chahdi, M., Benhaya, A.: A neural approach to study the scaling capability of the undoped double-gate and cylindrical gate all around MOSFETs. Mater. Sci. Eng. B 147, 239–244 (2008)
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