LiNbO3/p+n diode surface acoustic wave memory correlator-Reference-Cited by-同舟云学术

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LiNbO3/p+n diode surface acoustic wave memory correlator

Published:1997-10 Issue:5 Volume:40 Page:497-504
ISSN:1006-9321
Container-title:Science in China Series E: Technological Sciences
language:en
Short-container-title:Sci. China Ser. E-Technol. Sci.

Author:

Zhang Chao,Shui Yongan,Yin Jianhua

Publisher

Springer Science and Business Media LLC

Link

http://link.springer.com/content/pdf/10.1007/BF02917164.pdf

Reference5 articles.

1. Ingebrigtsen, K. A., Cohen, R. A., Mountain, R. W., A Schottky-diode acoustic memory and correlator,Appl. Phys. Lett., 1975, 28(11): 596.

2. Thorton, R. L., Kino, G. S., Monolithic ZnO on Si Schottky diode storage correlator, inProc. IEEE Ultrason. Symposium (ed. McAvoy, B. P.), Boston: IEEE Inc., 1980, 124–128.

3. Loh, K. W., Schroder, D. K., Clarke, R. C., The GaAs SAW diode storage correlator, inProc. of IEEE Ultrason. Symposium (ed. McAvoy, B. P.), Boston: IEEE Inc., 1980, 98–103.

4. Wagers, R. S., Principles of strip-coupled SAW memory correlators,IEEE Trans. Sonics and Ultrasonics, 1985, SU-32 (5): 716.

5. Morgan, D. P.,Surface-wave Devices for Signal Processing, New York: Elsevier Science Publishing Company Inc., 1985.

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