Electronic properties of the III-VI layer compounds GaS, GaSe and InSe-Reference-Cited by-同舟云学术

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Electronic properties of the III-VI layer compounds GaS, GaSe and InSe

Published:1979-11 Issue:1 Volume:54 Page:269-293
ISSN:1826-9877
Container-title:Il Nuovo Cimento B
language:en
Short-container-title:Nuov Cim B

Author:

Piacentini M.,Doni E.,Girlanda R.,Grasso V.,Balzarotti A.

Publisher

Springer Science and Business Media LLC

Subject

General Medicine

Link

https://link.springer.com/content/pdf/10.1007/BF02908241.pdf

Reference48 articles.

1. R. W. Damon andR. W. Redington:Phys. Rev.,96, 1498 (1954).

2. M. Yu. Sakhnovskii, V. B. Timofeev andA. S. Yakimova:Sov. Phys. Semicond.,2, 168 (1968).

3. M. V. Andriyashik, M. Yu. Sakhnovskii, V. B. Timofeev andA. S. Yakimova:Phys. Status Solidi,28, 277 (1968).

4. G. A. Akhundov, T. G. Kerimova andN. A. Gasanova:Sov. Phys. Semicond.,3, 85 (1969);Phys. Status Solidi,16, 1613 (1966).

5. M. I. Karaman andV. P. Mushinskii:Sov. Phys. Semicond.,4, 964 (1970).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evidence of direct optical transitions in γ−In2Se3;Physical Review Materials;2022-06-06

2. Electronic properties of the III-VI layer compounds GaS, GaSe and InSe;Il Nuovo Cimento B;1979-11

3. Electronic properties of the III-VI layer compounds GaS, GaSe and InSe;Il Nuovo Cimento B;1979-11

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