Author:
Fong Xuanyao,Choday Sri Harsha,Roy Kaushik
Reference31 articles.
1. ITRS Roadmap 2014.
http://www.itrs.net
.
2. Huai Y. Spin-transfer torque MRAM (STT-MRAM): challenges and prospects. AAPPS Bull. 2008;18(6):33–40.
3. Datta D, Behin-Aein B, Datta S, Salahuddin S. Voltage asymmetry of spin-transfer torques. IEEE Trans Nanotechnol. 2012;11(2):261–72.
4. Dorrance R, Ren F, Toriyama Y, Hafez AA, Yang CK, Markovic D. Scalability and design-space analysis of a 1T-1MTJ memory cell for STT-RAMs. IEEE Trans Electron Devices. 2012;59(4):878–87.
5. Fong X, Choday SH, Roy K. Bit-cell level optimization for non-volatile memories using magnetic tunnel junctions and spin-transfer torque switching. IEEE Trans Nanotechnol. 2012;11(1):172–81.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Power side channel attack analysis and detection;Proceedings of the 39th International Conference on Computer-Aided Design;2020-11-02