Evidence for Sb associated with multi-hydrogen in n-type silicon-Reference-Cited by-同舟云学术

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Evidence for Sb associated with multi-hydrogen in n-type silicon

Published:1994-12 Issue:1 Volume:93 Page:1389-1394
ISSN:0304-3834
Container-title:Hyperfine Interactions
language:en
Short-container-title:Hyperfine Interact

Author:

Liang Z. N.,Niesen L.,Haas C.

Publisher

Springer Science and Business Media LLC

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/BF02072882.pdf

Reference9 articles.

1. J.W. Corbett, S.J. Pearton and M. Stavola, in:Defects Control in Semiconductors, ed. K. Sumino (North-Holland, Amsterdam, 1990) p. 53.

2. C. Herring and N.M. Johnson, in:Hydrogen in Semiconductors, vol. eds. J.I. Pankove and N.M. Johnson, Semiconductors and Semimetals Vol. 34 (Academic, New York, 1991) chap. 10.

3. C.H. Seager, R.A. Anderson and D.K. Brice, J. Appl. Phys. 68(1990)3268.

4. N.M. Johnson and C. Herring, Phys. Rev. 43(1991)14297.

5. K.J. Chang and D.J. Chadi, Phys. Rev. Lett. 62(1989)937.

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