Segregation of Two Solutes, With Particular Reference to Semiconductors-Reference-Cited by-同舟云学术

Segregation of Two Solutes, With Particular Reference to Semiconductors

Published:1952-08 Issue:8 Volume:4 Page:861-865
ISSN:1047-4838
Container-title:JOM
language:en
Short-container-title:JOM

Author:

Pfann W. G.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF03398153.pdf

Reference11 articles.

1. G. H. Gulliver: Metallic Alloys (Appendix) (1922) London. Charles Griffin & Co.

2. E. Scheuer: Zum Kornseigerungsproblem. Ztsch. Metallkunde (1931) 23, p. 237.

3. A. Hayes and J. Chipman: Mechanism of Solidification and Segregation in a Low Carbon Rimming-steel Ingot. Trans. AIME (1939) 135, p. 85.

4. J. H. Scaff, H. C. Theuerer, and E. E. Schumacher: P-type and N-type Silicon and the Formation of the Photovoltaic Barrier in Silicon Ingots. Trans. AIME (1949) 185, p. 383; Journal of Metals (June 1949).

5. H. C. Torrey and C. A. Whitmer: Crystal Rectifiers. (1948) New York. McGraw-Hill Book Co.

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