Numerical Analysis of Impurities and Dislocations During Silicon Crystal Growth for Solar Cells
Author:
Gao Bing,Kakimoto Koichi
Reference37 articles.
1. Pizzini, S., Sandrinelli, A., Beghi, M., Narducci, D., Allegretti, F., Torchio, S., Fabbri, G., Ottaviani, G.P., Demartin, F., Fusi, A.: Influence of extended defects and native impurities on the electrical properties of directionally solidified polycrystalline silicon. J. Electrochem. Soc. 135, 155 (1988) 2. Moller, H.J., Long, L., Werner, M., Yang, D.: Oxygen and carbon precipitation in multicrystalline solar silicon. Phys. Status Solidi A 171, 175 (1999) 3. Moller, H.J., Funke, C., Lawerenz, A., Riedel, S., Werner, M.: Oxygen and lattice distortions in multicrystalline silicon. Sol. Energy Mater. Sol. Cells 72, 403 (2002) 4. Bolotov, V.V., Efremov, M.D., Babanskaya, I., Schmalz, K.: Raman study of mechanical stresses in processes of oxygen precipitation in silicon. Mater. Sci. Eng. B 21, 49 (1993) 5. El Ghitani, H., Pasquinelli, M., Martinuzzi, S.: Influence of dislocations on photovoltaic properties of multicrystalline silicon solar cells. J. Phys. III 3, 1941 (1993)
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
|
|