Effect of gravity on InGaSb crystal growth-Reference-Cited by-同舟云学术

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Effect of gravity on InGaSb crystal growth

Published:2005-03 Issue:1-4 Volume:16 Page:79-83
ISSN:0938-0108
Container-title:Microgravity - Science and Technology
language:en
Short-container-title:Microgravity sci. Technol.

Author:

Murakami Noriaki,Arafune Koji,Koyama Tadanobu,Momose Yoshimi,Ozawa Tetsuo,Okano Yasunori,Dost Sadik,Dao Le. H.,Kumagawa Masashi,Hayakawa Yasuhiro

Publisher

Springer Science and Business Media LLC

Subject

Applied Mathematics,General Physics and Astronomy,General Engineering,Modelling and Simulation

Link

http://link.springer.com/content/pdf/10.1007/BF02945952.pdf

Reference15 articles.

1. Hayakawa, Y., Balakrishnan, K., Komatsu, H., Murakami, N., Nakamura, T., Koyama, T., Ozawa, T., Okano, Y., Miyazawa, M., Dost, S., Dao, L. H., Kumagawa, M.: Drop Experiments on Crystallization of InGaSb Semiconductor. J. Crystal Growth, vol. 237-239, p. 1831 (2002).

2. Hayakawa, Y., Balakrishnan, K., Komatsu, H., Murakami, N., Nakamura, T., Koyama, T., Ozawa, T., Okano, Y., Miyazawa, M., Dost, S., Dao, L. H., Kumagawa, M.: Microgravity Experiments on Melting and Crystallization of InGaSb. Acta Astronautica vol. 51, p. 221 (2002).

3. Witt, A. F., Gatos, H. C., Lichtensteiger, M., Lavine, M. C., Herman, C. J.: Crystal Growth and Steady-State Segregation under Zero Gravity:InSb. J. Electrochem. Soc. vol. 122, p. 276 (1978).

4. Nishinaga, T., Ge, P., Huo, C., He, J., Nakamura, T.: Melt Growth of Striation and Etch Pit Free GaSb under Microgravity. J.Crystal Growth, vol. 174, p. 96 (1997).

5. Duffar, T., Serrano, M. D., Moore, C. D., Camassel, J., Contreras, S., Dusserre, P., Rivoallant, A., Tanner, B. K.: Bridgman Solidification of GaSb in Space. J.Crystal Growth, vol. 192, p. 63 (1998).

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