Properties of thin LPCVD silicon oxynitride films-Reference-Cited by-同舟云学术

Properties of thin LPCVD silicon oxynitride films

Published:1985-09 Issue:5 Volume:14 Page:617-632
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Pan P.,Abernathey J.,Schaefer C.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02654028.pdf

Reference19 articles.

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2. T. Ito, I. Kato, T. Nozaki, T. Nakamura, and H. Ishikawa, Appl. Phys. Lett.38, 370 (1981).

3. M.M. Moslehi and K.C. Saraswat, Proc. of Symposium on Silicon Nitride Thin Insulating Film, p. 324, Edited by V.J. Kapoor and H.J. Stein, The El ectrochem. Soc, Pennington, N.J. (1983).

4. S.S. Wong, H.R. Grinolds, and W.G. Oldham, Symposium on VLSI Technol., Tech. Dig. P. 88, Maui, Hawaii (1983).

5. M.J. Rand and J.F. Roberts, J. Electrochem. Soc.120, 446 (1973).

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