Author:
Ma Xiao,Wang Jianing,Ding Lijian
Funder
The institute of Energy of Hefei Comprehensive National Science Center
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Reference31 articles.
1. Rabkowski, J.: Silicon carbide power transistors: a new era in power electronics is initiated. Ind. Electron. Mag. IEEE. 6(2), 17–26 (2012)
2. Ugur, E., et al.: Degradation assessment and precursor identification for SiC MOSFETs under high temp cycling. IEEE Trans. Ind. Appl. 55(3), 2858–2867 (2019)
3. Aichinger, T., et al.: Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectron. Reliab. 80, 68–78 (2018)
4. Abuelnaga, A., Narimani, M., Bahman, A.S.: Power electronic converter reliability and prognosis review focusing on power switch module failures. J. Power Electron. 2, 1–16 (2021)
5. Zhou, W., Zhong, X., Sheng, K.: High temperature stability and the performance degradation of SiC MOSFETs. IEEE Trans. Power Electronics. 29(5), 2329–2337 (2014)