Chemical relaxation study of the heterogeneous silicon-hydrogen system under plasma conditions-Reference-Cited by-同舟云学术

Chemical relaxation study of the heterogeneous silicon-hydrogen system under plasma conditions

Published:1983-06 Issue:2 Volume:3 Page:219-234
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Wagner John J.,Vepřek S.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF00566021.pdf

Reference13 articles.

1. J. J. Wagner and S. Vepřek,Plasma Chem. Plasma Process. 2, 95 (1982).

2. M. Eigen and L. De Maeyer, Relaxation Methods, in:Techniques of Organic Chemistry, Vol. VIII, Part II, Chapter XVIII. A. Weissberger, ed., Wiley, New York (1963).

3. G.H. Czerlinski,Chemical Relaxation, Marcel Dekker, New York (1966).

4. D. N. Hague,Fast Reaction, Wiley, London (1971).

5. F.-A. Sarott, Diplomarbeit (M.Sc. Thesis), University of Zürich (1981).

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Farewell to Stan Vepřek, Founding Editor of Plasma Chemistry and Plasma Processing;Plasma Chemistry and Plasma Processing;2016-12-28

2. PLASMA DEPOSITION OF MICROCRYSTALLINE SILICON: THE ROLE OF PLASMA-SURFACE INTERACTION ON THE MICROSTRUCTURE;Handbook of Surfaces and Interfaces of Materials;2001

3. Chemistry of Amorphous Silicon Deposition Processes;Plasma Deposition of Amorphous Silicon-Based Materials;1995

4. The Mechanism of the Plasma Induced Deposition of a-Ge and μc-Ge from Germane: The limits and Possible Alternatives;MRS Proceedings;1994

5. Evaluation of CF4 plasma chemistry by power modulation;Plasma Chemistry and Plasma Processing;1992-12