Quantum Analytical Model for Lateral Dual Gate UTBB SOI MOSFET for Analog/RF Performance
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00666-0.pdf
Reference45 articles.
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4. Tang Z, Tang B, Zhao L, Wang G, Xu J, Xu Y, Wang H, Wang D, Li J, Lin F, Yan J, Zhao C, Ye T (2014) Impacts of Back gate bias stressing on device characteristics for extremely thin SoI (ETSoI) MOSFETs. IEEE Electron Device Letters 35:303–305
5. Miura-Mattausch M, Feldmann U, Fukunaga Y, Miyake M, Kikuchihara H, Ueno F, Mattausch HJ, Nakagawa T, Sugii N (2014) Compact modeling of SOI MOSFETs with ultrathin silicon and BOX layers. IEEE Transactions on Electron Devices 61:255–265
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