Overlapped Gate-Source/Drain H-shaped TFET: Proposal, Design and Linearity Analysis
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01404-w.pdf
Reference27 articles.
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2. Taur Y et al (199) CMOS scaling into the nanometer regime. Proc IEEE 85(4):486–504
3. Gupta A, Raman A (2020) Electrostatic doped nanotube TFET: Proposal, design, and investigation with linearity analysis. Silicon. https://doi.org/10.1007/s12633-020-00584-1
4. Choi WY, Park B-G, Lee JD, Liu T-JK(2007) Tunnelling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett 28(8):743–745
5. Singh S, Raj B (2020) Analysis of ONOFIC technique using SiGe heterojunction double gate vertical TFET for low power applications. Silicon :1–10
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