Author:
Meddour A.,Meddour F.,Drid S.
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference34 articles.
1. Kumar A, Roy JN (2019) A physics-based threshold voltage model for junction-less double gate FETs having vertical structural and doping asymmetry. IEEE Trans Electron Dev 66(8):3640–3645
2. Dubey A, Gupta M, Narang R, Saxena M, In 2016 IEEE International Nanoelectronics Conference (INEC) (pp. 1–2). IEEE, (2016, May)
3. Arar D, Djeffal F, Bentrcia T, Chahdi M (2014). Phys Status Solidi C 11(1):65–68
4. Dubey A, Gupta M, Narang R, Saxena M, In 2018 4th International Conference on Devices, Circuits and Systems (ICDCS) (pp. 117–120). IEEE, (2018, March)
5. Dubey A, Singh A, Narang R, Saxena M, Gupta M (2017) Modeling and simulation of junctionless double gate radiation sensitive FET (RADFET) dosimeter. IEEE Trans Nanotechnol 17(1):49–55
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献