Impact of Temperature Variation on Analog, Hot-Carrier Injection and Linearity Parameters of Nanotube Junctionless Double-Gate-All-Around (NJL-DGAA) MOSFETs

Author:

Kumar Nitish,Awasthi Himanshi,Purwar VaibhavORCID,Gupta Abhinav,Dubey Sarvesh

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. International Roadmap for Devices and Systems (IRDS): More Moore (2017) https://irds.ieee.org/images/files/pdf/2017/2017IRDS_ES.pdf. Accessed 06 Oct 2020

2. Kim Y-B (2010) Challenges for nanoscale MOSFETs and emerging nanoelectronics. Trans Electron Elec Mater 11:93–105

3. Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Colinge JP (2009) Junctionless multigate field-effect transistor. Appl Phys Lett 94:053511-1-053511-2

4. Lee CW et al (2010) Performance estimation of junctionless multigate transistor. Solid State Electron 54:97–103

5. Colinge JP et al (2010) Nanowire transistors without junctions. Nat Nanotechnol 5:225–229

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