Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony-Reference-Cited by-同舟云学术

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Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Published:2019-08-15 Issue:6 Volume:12 Page:1433-1439
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Lan Wu,Sun Yuxin,Zhao Tong,Yang Deren,Ma Xiangyang

Funder

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-019-00240-3.pdf

Reference23 articles.

1. Hu SM, Patrick WJ (1975) Effect of oxygen on dislocation movement in silicon. J Appl Phys 46(5):1869–1874

2. Zeng Z, Ma X, Chen J, Yang D, Ratschinski I, Hevroth F, Leipner HS (2010) Effect of oxygen precipitates on dislocation motion in Czochralski silicon. J Cryst Growth 312(2):169–173

3. Senkader S, Jurkschat K, Gambaro D, Falster RJ, Wilshaw PR (2001) On the locking of dislocations by oxygen in silicon. Philosophical Magazine A 3(81):759–775

4. Fukuda T, Ohsawa A (1992) Mechanical strength of silicon crystals with oxygen and/or germanium impurities. Appl Phys Lett 60(10):1184–1186

5. Yonenaga I (2001) Dislocation behavior in heavily impurity doped Si. Scr Mater 45(11):1267–1272

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1. Isovalent dopant-vacancy clustering in germanium;Physica B: Condensed Matter;2024-12

2. Isovalent dopant-vacancy clusters in silicon: Density functional theory calculations;Physica B: Condensed Matter;2024-02

3. Carrier Lifetime in 60 Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness;physica status solidi (a);2021-07-20

4. Suppress of dislocations induced by feedstocks weight in cast-mono crystalline silicon;Solar Energy;2021-07

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