Photoelectric Characterization of Intended Source UTBB 1 T FDSOI Based Image Sensor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01445-1.pdf
Reference22 articles.
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2. Mishra VK, Rao N (2020) Electrostatic Investigation of Intended Source Drain Ultra Thin Body FD-SOI MOSFET. Silicon 12:1–9. https://doi.org/10.1007/s12633-020-00377-6
3. M.Arsalan, XY. Cao, BR. Lu, YF. Chen, A. Zaslavsky, S. Cristoloveanu and J. Wan. “A highly sensitive photodetector based on deep-depletion effects in SOI transistors”, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, pp. 1–3, Oct. 2018. https://doi.org/10.1109/S3S.2018.8640150
4. Culurciello E, Etienne-Cummings R, Boahen KA (2003) A biomorphic digital image sensor. IEEE J Solid State Circuits 38(2):281–294. https://doi.org/10.1109/JSSC.2002.807412
5. Mendis S, Kemeny SE, Fossum ER (2002) CMOS active pixel image sensor. IEEE Trans. Electron Devices 41(3):452–453. https://doi.org/10.1109/16.275235
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