Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Cristoloveanu S, Wan J, Zaslavsky A (2016) A review of sharp-switching devices for ultra-low power applications. IEEE Electron Devices Society 4:215–226. https://doi.org/10.1109/JEDS.2016.2545978
2. Saurabh S, Kumar MJ (2017) Fundamentals of tunnel field effect transistors1st edn. CRC Press
3. Kumar S, Goel E, Kunal S, Balraj S (2016) A compact 2D analytical model for electrical characteristics of doubt gate tunnel FET with SiO2/high K stacked gate oxide structure. IEEE Trans Electron Devices:1–8
4. Knoch J, Appenzeller J (2010) Modeling of high performance p-type III-V heterojunction tunnel FETs. IEEE Electron Devices Lett 31:305–307. https://doi.org/10.1109/LED.2010.2041180
5. Samuel TS, Venkatesh M, Pandian MK, Vimala P (2021) Investigation of ON current and subthreshold swing of InSb/Si heterojunction stacked oxide double gate TFET with graphene nanoribbon. J Electron Mater. https://doi.org/10.1007/s11664-021-09244-5
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