A Holistic Approach on Junctionless Dual Material Double Gate (DMDG) MOSFET with High k Gate Stack for Low Power Digital Applications

Author:

Darwin S.,Arun Samuel T. S.

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Mohsenifar S, Shahrokhabadi MH (2015) Gate stack high-κ materials for Si-based MOSFETs past, present, and futures. Microelectronics and Solid State Electronics 4(1):12–24

2. Datta S (2013) Recent advances in high performance CMOS transistors: from planar to non-planar. Electrochem Soc Interfac 22(1):41–46 https://doi.org/10.1149/2.F04131if

3. Colinge JP (2004) Multiple-gate SOI MOSFETs. Solid State Electron 48(6):897–905

4. Doyle BS, Datta S, Doczy M, Hareland S, Jin B, Kavalieros J, Linton T, Murthy A, Rios R, Chau R (2003) High performance fully-depleted tri-gate CMOS transistors. IEEE Electron Device Lett. 24(4):263–265 https://doi.org/10.1109/LED.2003.810888

5. Jiang C, Liang R, Wang J, Xu J (2015) A two-dimensional analytical model for short channel junctionless double-gate MOSFETs. AIP Adv 5(5):057122-1–057122-22

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